CS60N06C4 Todos los transistores

 

CS60N06C4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS60N06C4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

CS60N06C4 Datasheet (PDF)

 ..1. Size:687K  wuxi china
 cs60n06c4.pdf pdf_icon

CS60N06C4

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:688K  crhj
 cs60n06 c4.pdf pdf_icon

CS60N06C4

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:844K  blue-rocket-elect
 brcs60n02dp.pdf pdf_icon

CS60N06C4

BRCS60N02DP Rev.A Apr.-2019 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. Halogen-free Product. / Applications

 8.2. Size:195K  crhj
 cs60n04 a4.pdf pdf_icon

CS60N06C4

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLU7821PBF | HITJ0203MP | SPP80P06PH | IRFPC42R | MC10N005 | SIHF9540S | LP3218DT1G

 

 
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