CS60N06C4
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS60N06C4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 55
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 57
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
TO252
CS60N06C4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS60N06C4
Datasheet (PDF)
..1. Size:687K wuxi china
cs60n06c4.pdf 
Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
7.1. Size:688K crhj
cs60n06 c4.pdf
Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.1. Size:844K blue-rocket-elect
brcs60n02dp.pdf
BRCS60N02DP Rev.A Apr.-2019 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. Halogen-free Product. / Applications
8.2. Size:195K crhj
cs60n04 a4.pdf
Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi
8.3. Size:279K wuxi china
cs60n04a4.pdf
Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, RDS(ON)Typ 8.5 m is obtained by advanced trench Technology which reduce the ID 60 A conduction loss, improve switching performance and enhance PD(TC=25) 52 W the avalanche energy. The transistor can be used in various 1.5 V VGS
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
