CS60N06C4 MOSFET Datasheet: N-Ch, 60V, 55A. Full specification with pinout and replacement list

CS60N06C4 Specs and Replacement

   Type Designator: CS60N06C4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252

CS60N06C4 substitution

- MOSFET ⓘ Cross-Reference Search

CS60N06C4 datasheet

..1. Size:687K wuxi china
cs60n06c4.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

7.1. Size:688K crhj
cs60n06 c4.pdf pdf_icon

8.1. Size:844K blue-rocket-elect
brcs60n02dp.pdf pdf_icon

... See More ⇒

8.2. Size:195K crhj
cs60n04 a4.pdf pdf_icon

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25 ) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi... See More ⇒