CS60N06C4 Datasheet. Specs and Replacement

Type Designator: CS60N06C4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

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CS60N06C4 datasheet

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CS60N06C4

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 7.1. Size:688K  crhj
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CS60N06C4

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

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CS60N06C4

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 cs60n04 a4.pdf pdf_icon

CS60N06C4

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25 ) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi... See More ⇒

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Detailed specifications: 2N5670, 2SK2255-01MR, 7N10L-AA3, 7N10G-AA3, 7N10L-TN3, 7N10G-TN3, AO4466L, AOD4144, IRF540N, EMB20P03V, FTW20N50A, HY1506P, HY1506I, HY1506B, JCS18N50WH, ME04N25, ME04N25G

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