CS60N06C4 - Даташиты. Аналоги. Основные параметры
Наименование производителя: CS60N06C4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 280 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO252
Аналог (замена) для CS60N06C4
CS60N06C4 Datasheet (PDF)
cs60n06c4.pdf

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs60n06 c4.pdf

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
brcs60n02dp.pdf

BRCS60N02DP Rev.A Apr.-2019 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. Halogen-free Product. / Applications
cs60n04 a4.pdf

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi
Другие MOSFET... 2N5670 , 2SK2255-01MR , 7N10L-AA3 , 7N10G-AA3 , 7N10L-TN3 , 7N10G-TN3 , AO4466L , AOD4144 , 50N06 , EMB20P03V , FTW20N50A , HY1506P , HY1506I , HY1506B , JCS18N50WH , ME04N25 , ME04N25G .
History: FDP054N10 | JMSL0406AGQ | HM2310B | 2SK1494-Z | 2SK1399 | IRF9243 | BSP75G
History: FDP054N10 | JMSL0406AGQ | HM2310B | 2SK1494-Z | 2SK1399 | IRF9243 | BSP75G



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