RCJ120N20 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RCJ120N20 datasheet

..1. Size:436K rohm
rcj120n20.pdf pdf_icon

RCJ120N20 Nch 200V 12A Power MOSFET Datasheet lOutline (2) VDSS 200V LPT(S) (SC-83) RDS(on) (Max.) 325mW ID 12A (1) PD (3) 40W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche t

..2. Size:255K inchange semiconductor
rcj120n20.pdf pdf_icon

isc N-Channel MOSFET Transistor RCJ120N20 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 325m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

6.1. Size:436K rohm
rcj120n25.pdf pdf_icon

RCJ120N25 Nch 250V 12A Power MOSFET Datasheet lOutline (2) VDSS 250V LPT(S) (SC-83) RDS(on) (Max.) 235mW ID 12A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tes

6.2. Size:254K inchange semiconductor
rcj120n25.pdf pdf_icon

isc N-Channel MOSFET Transistor RCJ120N25 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 235m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Otros transistores... RCD051N20 , RCD075N19 , RCD080N25TL , RCD100N19 , RCJ050N25 , RCJ080N25 , RCJ081N20 , RCJ100N25 , IRF630 , RCJ120N25 , RCJ160N20 , RCJ200N20 , RCJ220N25 , RCJ300N20 , RCJ510N25 , RCJ700N20 , RCX051N25 .