RCJ120N20 PDF and Equivalents Search

 

RCJ120N20 Specs and Replacement

Type Designator: RCJ120N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm

Package: SC-83

RCJ120N20 substitution

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RCJ120N20 datasheet

 ..1. Size:436K  rohm
 rcj120n20.pdf pdf_icon

RCJ120N20

RCJ120N20 Nch 200V 12A Power MOSFET Datasheet lOutline (2) VDSS 200V LPT(S) (SC-83) RDS(on) (Max.) 325mW ID 12A (1) PD (3) 40W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche t... See More ⇒

 ..2. Size:255K  inchange semiconductor
 rcj120n20.pdf pdf_icon

RCJ120N20

isc N-Channel MOSFET Transistor RCJ120N20 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 325m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 6.1. Size:436K  rohm
 rcj120n25.pdf pdf_icon

RCJ120N20

RCJ120N25 Nch 250V 12A Power MOSFET Datasheet lOutline (2) VDSS 250V LPT(S) (SC-83) RDS(on) (Max.) 235mW ID 12A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tes... See More ⇒

 6.2. Size:254K  inchange semiconductor
 rcj120n25.pdf pdf_icon

RCJ120N20

isc N-Channel MOSFET Transistor RCJ120N25 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 235m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

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Detailed specifications: RCD051N20, RCD075N19, RCD080N25TL, RCD100N19, RCJ050N25, RCJ080N25, RCJ081N20, RCJ100N25, IRF630, RCJ120N25, RCJ160N20, RCJ200N20, RCJ220N25, RCJ300N20, RCJ510N25, RCJ700N20, RCX051N25

Keywords - RCJ120N20 MOSFET specs

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