R6011ENX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6011ENX
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 570 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Paquete / Cubierta: TO-220FM
Búsqueda de reemplazo de R6011ENX MOSFET
R6011ENX Datasheet (PDF)
r6011enx.pdf

R6011ENX Nch 600V 11A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.390WID11A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
r6011enx.pdf

isc N-Channel MOSFET Transistor R6011ENXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 390m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6011enj.pdf

R6011ENJ Nch 600V 11A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.390WID11A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-
r6011enj.pdf

isc N-Channel MOSFET Transistor R6011ENJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 390m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Otros transistores... R6004END , R6004ENJ , R6004ENX , R6007ENJ , R6007ENX , R6009ENJ , R6009ENX , R6011ENJ , NCEP15T14 , R6012FNJ , R6015ENJ , R6015ENX , R6015ENZ , R6015FNJ , R6020ENJ , R6020ENX , R6020ENZ .
History: VBA1203M | 2SK2432 | IRF7811AV | IPP070N08N3 | SLF70R600S2 | BUZ40B | MS40N06
History: VBA1203M | 2SK2432 | IRF7811AV | IPP070N08N3 | SLF70R600S2 | BUZ40B | MS40N06



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
a94 transistor | c5149 datasheet | m1830m mosfet | pkch2bb mosfet | 2024ont | 2n1306 transistor | 2sa750 datasheet | 2sa940 transistor datasheet