R6011ENX MOSFET Datasheet: N-Ch, 600V, 11A. Full specification with pinout and replacement list

R6011ENX Specs and Replacement

Type Designator: R6011ENX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm

Package: TO-220FM

R6011ENX substitution

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R6011ENX datasheet

..1. Size:792K rohm
r6011enx.pdf pdf_icon

R6011ENX Nch 600V 11A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.390W ID 11A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea... See More ⇒

..2. Size:252K inchange semiconductor
r6011enx.pdf pdf_icon

isc N-Channel MOSFET Transistor R6011ENX FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 390m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

7.1. Size:750K rohm
r6011enj.pdf pdf_icon

R6011ENJ Nch 600V 11A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.390W ID 11A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-... See More ⇒

7.2. Size:255K inchange semiconductor
r6011enj.pdf pdf_icon

isc N-Channel MOSFET Transistor R6011ENJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 390m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒