R8005ANX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

R8005ANX Datasheet (PDF)

..1. Size:838K rohm
r8005anx.pdf pdf_icon

R8005ANX Nch 800V 5A Power MOSFET DatasheetlOutlineVDSS800V TO-220FMRDS(on) (Max.)2.08WID5A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V.(3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead pl

..2. Size:251K inchange semiconductor
r8005anx.pdf pdf_icon

isc N-Channel MOSFET Transistor R8005ANXFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

7.1. Size:1624K rohm
r8005anj.pdf pdf_icon

R8005ANJDatasheetNch 800V 5A Power MOSFETlOutlinel TO-263VDSS 800V SC-83RDS(on)(Max.) 2.1 LPT(S)ID 5APD 120W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Parallel use is easy.4) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTape Reel size

7.2. Size:254K inchange semiconductor
r8005anj.pdf pdf_icon

isc N-Channel MOSFET Transistor R8005ANJFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... R6030ENZ1 , R6035ENZ , R6035ENZ1 , R6046ANZ1 , R6046FNZ1 , R6046FNZC8 , R6047ENZ1 , R6076ENZ1 , IRFP064N , R8010ANX , R9521 , R9522 , 2SJ455 , 2SK0123 , BSC0906NS , IPD09N03LA , IPF09N03LA .