All MOSFET. R8005ANX Datasheet

 

R8005ANX MOSFET. Datasheet pdf. Equivalent


   Type Designator: R8005ANX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.08 Ohm
   Package: TO-220FM

 R8005ANX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R8005ANX Datasheet (PDF)

 ..1. Size:838K  rohm
 r8005anx.pdf

R8005ANX R8005ANX

R8005ANX Nch 800V 5A Power MOSFET DatasheetlOutlineVDSS800V TO-220FMRDS(on) (Max.)2.08WID5A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V.(3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead pl

 ..2. Size:251K  inchange semiconductor
 r8005anx.pdf

R8005ANX R8005ANX

isc N-Channel MOSFET Transistor R8005ANXFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 7.1. Size:1624K  rohm
 r8005anj.pdf

R8005ANX R8005ANX

R8005ANJDatasheetNch 800V 5A Power MOSFETlOutlinel TO-263VDSS 800V SC-83RDS(on)(Max.) 2.1 LPT(S)ID 5APD 120W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Parallel use is easy.4) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTape Reel size

 7.2. Size:254K  inchange semiconductor
 r8005anj.pdf

R8005ANX R8005ANX

isc N-Channel MOSFET Transistor R8005ANJFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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