NTD4809NH Todos los transistores

 

NTD4809NH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4809NH

Código: 4809NH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 52 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 58 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 12.5 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 331 pF

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: TO251, TO252

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NTD4809NH Datasheet (PDF)

1.1. ntd4809nh-1g.pdf Size:153K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • AEC-Q101 Qualified and PPAP Capable - NVD4809NH V(BR)DSS RDS(on) MAX ID MAX • These Devices are Pb-Free and are RoHS Compliant 9.0 m

1.2. ntd4809nhg.pdf Size:330K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mΩ @10V 30 V 58 A • CPU Power Delivery 12.5 mΩ @4.5 V • DC--DC

 2.1. ntd4809n-1g.pdf Size:150K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V • CPU Power Delivery 30 V 58 A 14 mW @ 4.5 V • DC-DC Conv

2.2. ntd4809na-1g.pdf Size:110K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses http://onsemi.com • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX • These are Pb-Free Devices 9.0 mW @ 10 V 25 V 58 A Applications 14 mW @ 4.5 V • CPU Power D

 2.3. ntd4809n-d.pdf Size:270K _onsemi

NTD4809NH
NTD4809NH

NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m? @10V CPU Power Delivery 30 V 58 A 14 m? @4.5 V DC--DC Converters Low S

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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