All MOSFET. NTD4809NH Datasheet

 

NTD4809NH MOSFET. Datasheet pdf. Equivalent

Type Designator: NTD4809NH

Marking Code: 4809NH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 58 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 12.5 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 331 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO251, TO252

NTD4809NH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD4809NH Datasheet (PDF)

1.1. ntd4809nh-1g.pdf Size:153K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • AEC-Q101 Qualified and PPAP Capable - NVD4809NH V(BR)DSS RDS(on) MAX ID MAX • These Devices are Pb-Free and are RoHS Compliant 9.0 m

1.2. ntd4809nhg.pdf Size:330K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mΩ @10V 30 V 58 A • CPU Power Delivery 12.5 mΩ @4.5 V • DC--DC

 2.1. ntd4809n-1g.pdf Size:150K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V • CPU Power Delivery 30 V 58 A 14 mW @ 4.5 V • DC-DC Conv

2.2. ntd4809na-1g.pdf Size:110K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses http://onsemi.com • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX • These are Pb-Free Devices 9.0 mW @ 10 V 25 V 58 A Applications 14 mW @ 4.5 V • CPU Power D

 2.3. ntd4809n-d.pdf Size:270K _onsemi

NTD4809NH
NTD4809NH

NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m? @10V CPU Power Delivery 30 V 58 A 14 m? @4.5 V DC--DC Converters Low S

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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