Справочник MOSFET. NTD4809NH

 

NTD4809NH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NTD4809NH

Маркировка: 4809NH

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 52 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.5 V

Максимально допустимый постоянный ток стока (Id): 58 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 12.5 nC

Время нарастания (tr): 20 ns

Выходная емкость (Cd): 331 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.009 Ohm

Тип корпуса: TO251, TO252

Аналог (замена) для NTD4809NH

 

 

NTD4809NH Datasheet (PDF)

1.1. ntd4809nh-1g.pdf Size:153K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • AEC-Q101 Qualified and PPAP Capable - NVD4809NH V(BR)DSS RDS(on) MAX ID MAX • These Devices are Pb-Free and are RoHS Compliant 9.0 m

1.2. ntd4809nhg.pdf Size:330K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mΩ @10V 30 V 58 A • CPU Power Delivery 12.5 mΩ @4.5 V • DC--DC

 2.1. ntd4809n-1g.pdf Size:150K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V • CPU Power Delivery 30 V 58 A 14 mW @ 4.5 V • DC-DC Conv

2.2. ntd4809na-1g.pdf Size:110K _update-mosfet

NTD4809NH
NTD4809NH

NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses http://onsemi.com • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX • These are Pb-Free Devices 9.0 mW @ 10 V 25 V 58 A Applications 14 mW @ 4.5 V • CPU Power D

 2.3. ntd4809n-d.pdf Size:270K _onsemi

NTD4809NH
NTD4809NH

NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m? @10V CPU Power Delivery 30 V 58 A 14 m? @4.5 V DC--DC Converters Low S

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