NTD4809NHG Todos los transistores

 

NTD4809NHG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4809NHG

Código: 4809NHG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 52 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 58 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 12.5 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 331 pF

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: TO251, TO252

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NTD4809NHG Datasheet (PDF)

1.1. ntd4809nh-1g.pdf Size:153K _update-mosfet

NTD4809NHG
NTD4809NHG

NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • AEC-Q101 Qualified and PPAP Capable - NVD4809NH V(BR)DSS RDS(on) MAX ID MAX • These Devices are Pb-Free and are RoHS Compliant 9.0 m

1.2. ntd4809nhg.pdf Size:330K _update-mosfet

NTD4809NHG
NTD4809NHG

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mΩ @10V 30 V 58 A • CPU Power Delivery 12.5 mΩ @4.5 V • DC--DC

 1.3. ntd4809nh-1g.pdf Size:153K _onsemi

NTD4809NHG
NTD4809NHG

NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • AEC-Q101 Qualified and PPAP Capable - NVD4809NH V(BR)DSS RDS(on) MAX ID MAX • These Devices are Pb-Free and are RoHS Compliant 9.0 m

1.4. ntd4809nhg.pdf Size:330K _onsemi

NTD4809NHG
NTD4809NHG

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mΩ @10V 30 V 58 A • CPU Power Delivery 12.5 mΩ @4.5 V • DC--DC

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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