NTD4809NHG Todos los transistores

 

NTD4809NHG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4809NHG

Código: 4809NHG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 52 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 58 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 12.5 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 331 pF

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: TO251, TO252

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NTD4809NHG Datasheet (PDF)

1.1. ntd4809nhg.pdf Size:330K _update-mosfet

NTD4809NHG
NTD4809NHG

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mΩ @10V 30 V 58 A • CPU Power Delivery 12.5 mΩ @4.5 V • DC--DC

2.1. ntd4809n-d.pdf Size:270K _onsemi

NTD4809NHG
NTD4809NHG

NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m? @10V CPU Power Delivery 30 V 58 A 14 m? @4.5 V DC--DC Converters Low S

 4.1. ntd4805n-d.pdf Size:294K _onsemi

NTD4809NHG
NTD4809NHG

NTD4805N Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 5.0 m? @10V CPU Power Delivery 30 V 88 A 7.4 m? @4.5V DC--DC Converters Low S

4.2. ntd4806n.pdf Size:124K _onsemi

NTD4809NHG
NTD4809NHG

NTD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 6.0 mW @ 10 V CPU Power Delivery 30 V 76 A 9.4 mW @ 4.5 V DC-DC Converters Low

 4.3. ntd4808n-d.pdf Size:320K _onsemi

NTD4809NHG
NTD4809NHG

NTD4808N Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 8.0 m? @10V CPU Power Delivery 30 V 63 A 12.4 m? @4.5 V DC--DC Converters Lo

4.4. ntd4804n-d.pdf Size:275K _onsemi

NTD4809NHG
NTD4809NHG

NTD4804N Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 4.0 m? @10V CPU Power Delivery 30 V 117 A 5.5 m? @4.5V DC--DC Converters Low

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