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NTD4809NHG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: NTD4809NHG

Маркировка: 4809NHG

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 52 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.5 V

Максимально допустимый постоянный ток стока (Id): 58 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 12.5 nC

Время нарастания (tr): 20 ns

Выходная емкость (Cd): 331 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.009 Ohm

Тип корпуса: TO251_TO252

Аналог (замена) для NTD4809NHG

 

 

NTD4809NHG Datasheet (PDF)

1.1. ntd4809nhg.pdf Size:330K _update-mosfet

NTD4809NHG
NTD4809NHG

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mΩ @10V 30 V 58 A • CPU Power Delivery 12.5 mΩ @4.5 V • DC--DC

2.1. ntd4809n-d.pdf Size:270K _onsemi

NTD4809NHG
NTD4809NHG

NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m? @10V CPU Power Delivery 30 V 58 A 14 m? @4.5 V DC--DC Converters Low S

 4.1. ntd4805n-d.pdf Size:294K _onsemi

NTD4809NHG
NTD4809NHG

NTD4805N Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 5.0 m? @10V CPU Power Delivery 30 V 88 A 7.4 m? @4.5V DC--DC Converters Low S

4.2. ntd4806n.pdf Size:124K _onsemi

NTD4809NHG
NTD4809NHG

NTD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 6.0 mW @ 10 V CPU Power Delivery 30 V 76 A 9.4 mW @ 4.5 V DC-DC Converters Low

 4.3. ntd4808n-d.pdf Size:320K _onsemi

NTD4809NHG
NTD4809NHG

NTD4808N Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 8.0 m? @10V CPU Power Delivery 30 V 63 A 12.4 m? @4.5 V DC--DC Converters Lo

4.4. ntd4804n-d.pdf Size:275K _onsemi

NTD4809NHG
NTD4809NHG

NTD4804N Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 4.0 m? @10V CPU Power Delivery 30 V 117 A 5.5 m? @4.5V DC--DC Converters Low

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Список транзисторов

Обновления

MOSFET: US6U37 | US6M2 | US6M11 | US6M1 | US6K4 | US6K2 | US6K1 | US6J11 | US5U38 | US5U35 | US5U30 | US5U3 | US5U29TR | US5U2 | US5U1 |
 

 

 

 

 

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