All MOSFET. NTD4809NHG Datasheet

 

NTD4809NHG MOSFET. Datasheet pdf. Equivalent

Type Designator: NTD4809NHG

Marking Code: 4809NHG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 58 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 12.5 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 331 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO251_TO252

NTD4809NHG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD4809NHG Datasheet (PDF)

1.1. ntd4809nhg.pdf Size:330K _update-mosfet

NTD4809NHG
NTD4809NHG

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses http://onsemi.com • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mΩ @10V 30 V 58 A • CPU Power Delivery 12.5 mΩ @4.5 V • DC--DC

2.1. ntd4809n-d.pdf Size:270K _onsemi

NTD4809NHG
NTD4809NHG

NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m? @10V CPU Power Delivery 30 V 58 A 14 m? @4.5 V DC--DC Converters Low S

 4.1. ntd4805n-d.pdf Size:294K _onsemi

NTD4809NHG
NTD4809NHG

NTD4805N Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 5.0 m? @10V CPU Power Delivery 30 V 88 A 7.4 m? @4.5V DC--DC Converters Low S

4.2. ntd4806n.pdf Size:124K _onsemi

NTD4809NHG
NTD4809NHG

NTD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 6.0 mW @ 10 V CPU Power Delivery 30 V 76 A 9.4 mW @ 4.5 V DC-DC Converters Low

 4.3. ntd4808n-d.pdf Size:320K _onsemi

NTD4809NHG
NTD4809NHG

NTD4808N Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 8.0 m? @10V CPU Power Delivery 30 V 63 A 12.4 m? @4.5 V DC--DC Converters Lo

4.4. ntd4804n-d.pdf Size:275K _onsemi

NTD4809NHG
NTD4809NHG

NTD4804N Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 4.0 m? @10V CPU Power Delivery 30 V 117 A 5.5 m? @4.5V DC--DC Converters Low

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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