SPP07N60C2 Todos los transistores

 

SPP07N60C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP07N60C2

Código: 07N60C2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 7.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5.5 V

Carga de compuerta (Qg): 27 nC

Tiempo de elevación (tr): 33 nS

Conductancia de drenaje-sustrato (Cd): 370 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET SPP07N60C2

 

SPP07N60C2 Datasheet (PDF)

1.1. spa07n60c2 spp07n60c2 spb07n60c2.pdf Size:158K _update-mosfet

SPP07N60C2
SPP07N60C2

SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS™ Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi

1.2. spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf Size:620K _infineon

SPP07N60C2
SPP07N60C2

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31;-3-111:

 1.3. spp07n60cfd rev1.4.pdf Size:568K _infineon

SPP07N60C2
SPP07N60C2

SPP07N60CFD CoolMOSTM Power Transistor Product Summary Features V @Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.7 DS(on),max Extremely low reverse recovery charge I 6.6 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: Soft switching

1.4. spp07n60cfd.pdf Size:247K _inchange_semiconductor

SPP07N60C2
SPP07N60C2

isc N-Channel MOSFET Transistor SPP07N60CFD,ISPP07N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.7Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

 1.5. spp07n60c3.pdf Size:248K _inchange_semiconductor

SPP07N60C2
SPP07N60C2

isc N-Channel MOSFET Transistor SPP07N60C3,ISPP07N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MA

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
Back to Top

 


SPP07N60C2
  SPP07N60C2
  SPP07N60C2
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |

 

 

 
Back to Top