SPP07N60C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP07N60C2

Código: 07N60C2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 7.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5.5 V

Carga de compuerta (Qg): 27 nC

Tiempo de elevación (tr): 33 nS

Conductancia de drenaje-sustrato (Cd): 370 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO220

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SPP07N60C2 Datasheet (PDF)

1.1. spa07n60c2 spp07n60c2 spb07n60c2.pdf Size:158K _update-mosfet

SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS™ Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi

1.2. spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf Size:620K _infineon

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS� Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 ? � New revolutionary high voltage technology ID 7.3 A � Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 � Periodic avalanche rated 2 � Extreme dv/dt rated 3 � High peak current capability 2 3 2 1 1 P-TO220-3-31 � Improved transconductance P-TO220-3-1 � PG-TO-220-3-31;-3-111:

1.3. spp07n60cfd rev1.4.pdf Size:568K _infineon

SPP07N60CFD CoolMOSTM Power Transistor Product Summary Features V @Tjmax 650 V DS � Intrinsic fast-recovery body diode R 0.7 DS(on),max � Extremely low reverse recovery charge I 6.6 A D � Ultra low gate charge � Extreme dv /dt rated PG-TO220 � High peak current capability � Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: � Soft switching

1.4. spp07n60cfd.pdf Size:247K _inchange_semiconductor

isc N-Channel MOSFET Transistor SPP07N60CFD，ISPP07N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.7Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

1.5. spp07n60c3.pdf Size:248K _inchange_semiconductor

isc N-Channel MOSFET Transistor SPP07N60C3，ISPP07N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MA

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

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