SPP07N60C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP07N60C2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 370 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SPP07N60C2 MOSFET
SPP07N60C2 Datasheet (PDF)
spa07n60c2 spp07n60c2 spb07n60c2.pdf

SPP07N60C2, SPB07N60C2Final dataSPA07N60C2Cool MOS Power TransistorFeatureProduct Summary New revolutionary high voltage technologyVDS @ Tjmax 650 V Ultra low gate chargeRDS(on) 0.6 Periodic avalanche ratedID 7.3 A Extreme dv/dt rated Ultra low effective capacitancesP-TO220-3-31 P-TO263-3-2 P-TO220-3-1321P-TO220-3-31Type Package Orderi
spp07n60c3 spi07n60c3 spa07n60c3.pdf

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P
spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P
spp07n60cfd.pdf

SPP07N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.7DS(on),max Extremely low reverse recovery chargeI 6.6 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed for:
Otros transistores... BSC0906NS , IPD09N03LA , IPF09N03LA , IPS09N03LA , IPU09N03LA , NTD4809NH , NTD4809NHG , SI2300A , IRFP260N , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN .
History: IRFP341 | PJD7NA65 | IXTV22N50PS
History: IRFP341 | PJD7NA65 | IXTV22N50PS



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