All MOSFET. SPP07N60C2 Datasheet

 

SPP07N60C2 Datasheet and Replacement


   Type Designator: SPP07N60C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220
 

 SPP07N60C2 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SPP07N60C2 Datasheet (PDF)

 ..1. Size:158K  infineon
spa07n60c2 spp07n60c2 spb07n60c2.pdf pdf_icon

SPP07N60C2

SPP07N60C2, SPB07N60C2Final dataSPA07N60C2Cool MOS Power TransistorFeatureProduct Summary New revolutionary high voltage technologyVDS @ Tjmax 650 V Ultra low gate chargeRDS(on) 0.6 Periodic avalanche ratedID 7.3 A Extreme dv/dt rated Ultra low effective capacitancesP-TO220-3-31 P-TO263-3-2 P-TO220-3-1321P-TO220-3-31Type Package Orderi

 5.1. Size:702K  infineon
spp07n60c3 spi07n60c3 spa07n60c3.pdf pdf_icon

SPP07N60C2

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 5.2. Size:620K  infineon
spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf pdf_icon

SPP07N60C2

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 5.3. Size:568K  infineon
spp07n60cfd.pdf pdf_icon

SPP07N60C2

SPP07N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.7DS(on),max Extremely low reverse recovery chargeI 6.6 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed for:

Datasheet: BSC0906NS , IPD09N03LA , IPF09N03LA , IPS09N03LA , IPU09N03LA , NTD4809NH , NTD4809NHG , SI2300A , IRFP260N , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN .

History: R5007FNX

Keywords - SPP07N60C2 MOSFET datasheet

 SPP07N60C2 cross reference
 SPP07N60C2 equivalent finder
 SPP07N60C2 lookup
 SPP07N60C2 substitution
 SPP07N60C2 replacement

 

 
Back to Top

 


 
.