Справочник MOSFET. SPP07N60C2

 

SPP07N60C2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SPP07N60C2

Маркировка: 07N60C2

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 83 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5.5 V

Максимально допустимый постоянный ток стока (Id): 7.3 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 27 nC

Время нарастания (tr): 33 ns

Выходная емкость (Cd): 370 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm

Тип корпуса: TO220

Аналог (замена) для SPP07N60C2

 

 

SPP07N60C2 Datasheet (PDF)

1.1. spa07n60c2 spp07n60c2 spb07n60c2.pdf Size:158K _update-mosfet

SPP07N60C2
SPP07N60C2

SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS™ Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi

1.2. spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf Size:620K _infineon

SPP07N60C2
SPP07N60C2

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 ? New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31;-3-111:

 1.3. spp07n60cfd rev1.4.pdf Size:568K _infineon

SPP07N60C2
SPP07N60C2

SPP07N60CFD CoolMOSTM Power Transistor Product Summary Features V @Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.7 DS(on),max Extremely low reverse recovery charge I 6.6 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: Soft switching

1.4. spp07n60cfd.pdf Size:247K _inchange_semiconductor

SPP07N60C2
SPP07N60C2

isc N-Channel MOSFET Transistor SPP07N60CFD,ISPP07N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.7Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

 1.5. spp07n60c3.pdf Size:248K _inchange_semiconductor

SPP07N60C2
SPP07N60C2

isc N-Channel MOSFET Transistor SPP07N60C3,ISPP07N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MA

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