RE1C002UN Todos los transistores

 

RE1C002UN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RE1C002UN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: EMT3F

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RE1C002UN datasheet

 ..1. Size:545K  rohm
 re1c002un.pdf pdf_icon

RE1C002UN

RE1C002UN Nch 20V 200mA Small Signal MOSFET Datasheet lOutline VDSS 20V EMT3F (3) RDS(on) (Max.) 1.2W (1) ID 200mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE

 7.1. Size:481K  rohm
 re1c002zp.pdf pdf_icon

RE1C002UN

RE1C002ZP Pch -20V -200mA Small Signal MOSFET Datasheet lOutline VDSS -20V (3) EMT3F RDS(on) (Max.) 1.2W (1) ID -200mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 ESD PROTECTION DIODE *2 BODY DIO

 8.1. Size:590K  rohm
 re1c001un.pdf pdf_icon

RE1C002UN

RE1C001UN Nch 20V 100mA Small Signal MOSFET Data Sheet lOutline VDSS 20V EMT3F (3) RDS(on) (Max.) 3.5W ID (1) 100mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE

 8.2. Size:399K  rohm
 re1c001zp.pdf pdf_icon

RE1C002UN

RE1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V (3) EMT3F RDS(on) (Max.) 3.8W (1) ID -100mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIO

MOSTRAR MÁS

Otros transistores... SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , 2N7000 , RE1C002ZP , RE1E002SP , RE1J002YN , RE1L002SN , RF1S25N06 , RF1S30N06LE , RF1S30P06 , RF1S40N10 .

History: ZXMN10A07F | RF1S30N06LE | RF1S40N10

 

 

 

 

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