All MOSFET. RE1C002UN Datasheet

 

RE1C002UN Datasheet and Replacement


   Type Designator: RE1C002UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: EMT3F
 

 RE1C002UN substitution

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RE1C002UN Datasheet (PDF)

 ..1. Size:545K  rohm
 re1c002un.pdf pdf_icon

RE1C002UN

RE1C002UN Nch 20V 200mA Small Signal MOSFET DatasheetlOutlineVDSS20VEMT3F (3) RDS(on) (Max.)1.2W(1) ID200mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

 7.1. Size:481K  rohm
 re1c002zp.pdf pdf_icon

RE1C002UN

RE1C002ZP Pch -20V -200mA Small Signal MOSFET DatasheetlOutlineVDSS-20V(3) EMT3FRDS(on) (Max.)1.2W(1) ID-200mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 ESD PROTECTION DIODE *2 BODY DIO

 8.1. Size:590K  rohm
 re1c001un.pdf pdf_icon

RE1C002UN

RE1C001UN Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VEMT3F(3) RDS(on) (Max.)3.5WID (1) 100mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

 8.2. Size:399K  rohm
 re1c001zp.pdf pdf_icon

RE1C002UN

RE1C001ZP Pch -20V -100mA Small Signal MOSFET DatasheetlOutlineVDSS-20V(3) EMT3FRDS(on) (Max.)3.8W(1) ID-100mA(2) PD150mWlFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIO

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Datasheet: SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , IRF9540 , RE1C002ZP , RE1E002SP , RE1J002YN , RE1L002SN , RF1S25N06 , RF1S30N06LE , RF1S30P06 , RF1S40N10 .

History: IRF7309IPBF | IRHY9230CM | IRFB61N15D | JFPC2N80C | STB40NS15 | SRT15N110HTC | SNN3100L10Q

Keywords - RE1C002UN MOSFET datasheet

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 RE1C002UN equivalent finder
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