RE1C002UN MOSFET Datasheet: N-Ch, 20V, 0.2A. Full specification with pinout and replacement list

RE1C002UN Specs and Replacement

Type Designator: RE1C002UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: EMT3F

RE1C002UN substitution

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RE1C002UN datasheet

..1. Size:545K rohm
re1c002un.pdf pdf_icon

RE1C002UN Nch 20V 200mA Small Signal MOSFET Datasheet lOutline VDSS 20V EMT3F (3) RDS(on) (Max.) 1.2W (1) ID 200mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE ... See More ⇒

7.1. Size:481K rohm
re1c002zp.pdf pdf_icon

RE1C002ZP Pch -20V -200mA Small Signal MOSFET Datasheet lOutline VDSS -20V (3) EMT3F RDS(on) (Max.) 1.2W (1) ID -200mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 ESD PROTECTION DIODE *2 BODY DIO... See More ⇒

8.1. Size:590K rohm
re1c001un.pdf pdf_icon

RE1C001UN Nch 20V 100mA Small Signal MOSFET Data Sheet lOutline VDSS 20V EMT3F (3) RDS(on) (Max.) 3.5W ID (1) 100mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE ... See More ⇒

8.2. Size:399K rohm
re1c001zp.pdf pdf_icon

RE1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V (3) EMT3F RDS(on) (Max.) 3.8W (1) ID -100mA (2) PD 150mW lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIO... See More ⇒

Detailed specifications: SPA07N60C2, RDX050N50FU6, RDX060N60FU6, RDX080N50FU6, RDX100N60FU6, RDX120N50FU6, RE1C001UN, RE1C001ZP, 2N7000, RE1C002ZP, RE1E002SP, RE1J002YN, RE1L002SN, RF1S25N06, RF1S30N06LE, RF1S30P06, RF1S40N10