SIS478DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

New ProductSiS478DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.020 at VGS = 10 V 1230 3.6 nC 100 % Rg Tested0.030 at VGS = 4.5 V 12 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8

SiS472BDNwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D7 100 % Rg and UIS testedD65 Material categorization:for definitions of compliance please see www.vishay.com/doc?99912112SSAPPLICATIONS3SD4S1G DC/DC power suppliesTop View Bottom View

New ProductSiS476DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.)Definition0.0025 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET30 22.5 nC0.0035 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212

SiS472DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET30 9.8 nC0.0124 at VGS = 4.5 V 20 Optimized for High-Side SynchronousRectifier Operation 100 % Rg TestedPowerPAK 1212-8 100 % UI

SiS472ADNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a, g Qg (Typ.) Optimized for High-Side SynchronousRectifier Operation0.0085 at VGS = 10 V 2430 12.8 nC 100 % Rg and UIS Tested0.0105 at VGS = 4.5 V 24 Material categorization:For definitions of compliance please see P