SIS478DN Datasheet. Equivalente

 ..1. Size:545K  vishay
 sis478dn.pdf

New Product SiS478DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.020 at VGS = 10 V 12 30 3.6 nC 100 % Rg Tested 0.030 at VGS = 4.5 V 12 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8

 9.1. Size:231K  vishay
 sis472bdn.pdf

SiS472BDN www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 100 % Rg and UIS tested D 6 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 S S APPLICATIONS 3 S D 4 S 1 G DC/DC power supplies Top View Bottom View

 9.2. Size:574K  vishay
 sis476dn.pdf

New Product SiS476DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) Definition 0.0025 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET 30 22.5 nC 0.0035 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212

 9.3. Size:559K  vishay
 sis472dn.pdf

SiS472DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a, g Qg (Typ.) Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET 30 9.8 nC 0.0124 at VGS = 4.5 V 20 Optimized for High-Side Synchronous Rectifier Operation 100 % Rg Tested PowerPAK 1212-8 100 % UI

 9.4. Size:561K  vishay
 sis472adn.pdf

SiS472ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a, g Qg (Typ.) Optimized for High-Side Synchronous Rectifier Operation 0.0085 at VGS = 10 V 24 30 12.8 nC 100 % Rg and UIS Tested 0.0105 at VGS = 4.5 V 24 Material categorization For definitions of compliance please see P