SIS478DN - параметры транзистора MOSFET, его аналоги, datasheet

SIS478DN Datasheet (PDF)

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New ProductSiS478DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.020 at VGS = 10 V 1230 3.6 nC 100 % Rg Tested0.030 at VGS = 4.5 V 12 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8

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SiS472BDNwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D7 100 % Rg and UIS testedD65 Material categorization:for definitions of compliance please see www.vishay.com/doc?99912112SSAPPLICATIONS3SD4S1G DC/DC power suppliesTop View Bottom View

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New ProductSiS476DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.)Definition0.0025 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET30 22.5 nC0.0035 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212

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SiS472DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET30 9.8 nC0.0124 at VGS = 4.5 V 20 Optimized for High-Side SynchronousRectifier Operation 100 % Rg TestedPowerPAK 1212-8 100 % UI