All MOSFET. SIS478DN Datasheet

 

SIS478DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIS478DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: 1212-8

 SIS478DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIS478DN Datasheet (PDF)

 ..1. Size:545K  vishay
 sis478dn.pdf

SIS478DN SIS478DN

New ProductSiS478DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.020 at VGS = 10 V 1230 3.6 nC 100 % Rg Tested0.030 at VGS = 4.5 V 12 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8

 9.1. Size:231K  vishay
 sis472bdn.pdf

SIS478DN SIS478DN

SiS472BDNwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D7 100 % Rg and UIS testedD65 Material categorization:for definitions of compliance please see www.vishay.com/doc?99912112SSAPPLICATIONS3SD4S1G DC/DC power suppliesTop View Bottom View

 9.2. Size:574K  vishay
 sis476dn.pdf

SIS478DN SIS478DN

New ProductSiS476DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.)Definition0.0025 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET30 22.5 nC0.0035 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212

 9.3. Size:559K  vishay
 sis472dn.pdf

SIS478DN SIS478DN

SiS472DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET30 9.8 nC0.0124 at VGS = 4.5 V 20 Optimized for High-Side SynchronousRectifier Operation 100 % Rg TestedPowerPAK 1212-8 100 % UI

 9.4. Size:561K  vishay
 sis472adn.pdf

SIS478DN SIS478DN

SiS472ADNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a, g Qg (Typ.) Optimized for High-Side SynchronousRectifier Operation0.0085 at VGS = 10 V 2430 12.8 nC 100 % Rg and UIS Tested0.0105 at VGS = 4.5 V 24 Material categorization:For definitions of compliance please see P

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