SISA14DN Todos los transistores

 ..1. Size:539K  vishay
 sisa14dn.pdf

SiSA14DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f, g Qg (Typ.) 100 % Rg and UIS Tested 0.00510 at VGS = 10 V Material categorization 30 20 9.4 nC 0.00850 at VGS = 4.5 V For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8 APPLICATIONS D

 9.1. Size:577K  vishay
 sisa12adn.pdf

New Product SiSA12ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.0043 at VGS = 10 V 25 Material categorization 30 13.6 nC 0.0060 at VGS = 4.5 V For definitions of compliance please see 25 www.vishay.com/doc?99912 PowerPAK

 9.2. Size:577K  vishay
 sisa18dn.pdf

New Product SiSA18DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 Material categorization 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8

 9.3. Size:597K  vishay
 sisa10dn.pdf

New Product SiSA10DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.0037 at VGS = 10 V 30 Material categorization 30 15.4 nC 0.0050 at VGS = 4.5 V For definitions of compliance please see 30 www.vishay.com/doc?99912 PowerPAK 1212

 9.4. Size:587K  vishay
 sisa12dn.pdf

New Product SiSA12DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) Definition TrenchFET Gen IV Power MOSFET 0.0043 at VGS = 10 V 25 30 13.6 nC 100 % Rg and UIS Tested 0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/EC APPLICAT

 9.5. Size:566K  vishay
 sisa18adn.pdf

New Product SiSA18ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 Material categorization 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8