SISA14DN PDF and Equivalents Search

 

SISA14DN Specs and Replacement

Type Designator: SISA14DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 445 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: 1212-8

SISA14DN substitution

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SISA14DN datasheet

 ..1. Size:539K  vishay
sisa14dn.pdf pdf_icon

SISA14DN

SiSA14DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f, g Qg (Typ.) 100 % Rg and UIS Tested 0.00510 at VGS = 10 V Material categorization 30 20 9.4 nC 0.00850 at VGS = 4.5 V For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8 APPLICATIONS D... See More ⇒

 9.1. Size:577K  vishay
sisa12adn.pdf pdf_icon

SISA14DN

New Product SiSA12ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.0043 at VGS = 10 V 25 Material categorization 30 13.6 nC 0.0060 at VGS = 4.5 V For definitions of compliance please see 25 www.vishay.com/doc?99912 PowerPAK ... See More ⇒

 9.2. Size:577K  vishay
sisa18dn.pdf pdf_icon

SISA14DN

New Product SiSA18DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 Material categorization 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8 ... See More ⇒

 9.3. Size:597K  vishay
sisa10dn.pdf pdf_icon

SISA14DN

New Product SiSA10DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.0037 at VGS = 10 V 30 Material categorization 30 15.4 nC 0.0050 at VGS = 4.5 V For definitions of compliance please see 30 www.vishay.com/doc?99912 PowerPAK 1212... See More ⇒

Detailed specifications: SIS892ADN , SIS892DN , SIS902DN , SIS990DN , SISA04DN , SISA10DN , SISA12ADN , SISA12DN , AO4468 , SISA18ADN , SISA18DN , SISS23DN , SISS40DN , SIX3439K , SIZ300DT , SIZ340DT , SIZ342DT .

History: NTTFS6H880NL

Keywords - SISA14DN MOSFET specs

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