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SISA14DN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SISA14DN

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 3.57 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.2 V

Максимально допустимый постоянный ток стока (Id): 19.7 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 19.4 nC

Время нарастания (tr): 8 ns

Выходная емкость (Cd): 445 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0051 Ohm

Тип корпуса: 1212-8

Аналог (замена) для SISA14DN

 

 

SISA14DN Datasheet (PDF)

1.1. sisa14dn.pdf Size:539K _update-mosfet

SISA14DN
SISA14DN

SiSA14DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) • 100 % Rg and UIS Tested 0.00510 at VGS = 10 V • Material categorization: 30 20 9.4 nC 0.00850 at VGS = 4.5 V For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8 APPLICATIONS D

5.1. sisa18dn.pdf Size:577K _update-mosfet

SISA14DN
SISA14DN

New Product SiSA18DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) • 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 • Material categorization: 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8

5.2. sisa12adn.pdf Size:577K _update-mosfet

SISA14DN
SISA14DN

New Product SiSA12ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)a, g Qg (Typ.) • 100 % Rg and UIS Tested 0.0043 at VGS = 10 V 25 • Material categorization: 30 13.6 nC 0.0060 at VGS = 4.5 V For definitions of compliance please see 25 www.vishay.com/doc?99912 PowerPAK®

 5.3. sisa18adn.pdf Size:566K _update-mosfet

SISA14DN
SISA14DN

New Product SiSA18ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) • 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 • Material categorization: 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8

5.4. sisa12dn.pdf Size:587K _update-mosfet

SISA14DN
SISA14DN

New Product SiSA12DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () (Max.) ID (A)a, g Qg (Typ.) Definition • TrenchFET® Gen IV Power MOSFET 0.0043 at VGS = 10 V 25 30 13.6 nC • 100 % Rg and UIS Tested 0.0060 at VGS = 4.5 V 25 • Compliant to RoHS Directive 2002/95/EC APPLICAT

 5.5. sisa10dn.pdf Size:597K _update-mosfet

SISA14DN
SISA14DN

New Product SiSA10DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Gen IV Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)a, g Qg (Typ.) • 100 % Rg and UIS Tested 0.0037 at VGS = 10 V 30 • Material categorization: 30 15.4 nC 0.0050 at VGS = 4.5 V For definitions of compliance please see 30 www.vishay.com/doc?99912 PowerPAK® 1212

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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Обновления

MOSFET: WMH07N65C2 | WMG07N65C2 | WMP07N65C2 | WMO07N65C2 | WMM07N65C2 | WML07N65C2 | TP0610T | ME7170-G | LTP70N06 | HY1707PM | HY1707PS | HY1707MF | HY1707I | HY1707B | HY1707M |
 

 

 

 

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