IPA70R360P7S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA70R360P7S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 12.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 11 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Encapsulados: TO220FP
Búsqueda de reemplazo de IPA70R360P7S MOSFET
- Selecciónⓘ de transistores por parámetros
IPA70R360P7S datasheet
ipa70r360p7s 70s360p7.pdf
IPA70R360P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,
ipa70r360p7s.pdf
IPA70R360P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
ipa70r600p7s.pdf
IPA70R600P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
ipa70r900p7s.pdf
IPA70R900P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
Otros transistores... GP28S50XN220 , GP28S50XN220FP , GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , GP28S50GN220FP , GP28S50GN3P , GP28S50GN247 , STP80NF70 , IPSA70R360P7S , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M , SIZ728DT , SIZ730DT , SIZ790DT .
History: INK0103AU1 | 2SK3111 | IRF720SPBF | BSC0923NDI | 4N65KL-TF3-T | IRF7313PBF-1 | MMN400A006U1
History: INK0103AU1 | 2SK3111 | IRF720SPBF | BSC0923NDI | 4N65KL-TF3-T | IRF7313PBF-1 | MMN400A006U1
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