IPA70R360P7S MOSFET Datasheet: N-Ch, 700V, 12.5A. Full specification with pinout and replacement list

IPA70R360P7S Specs and Replacement

Type Designator: IPA70R360P7S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220FP

IPA70R360P7S substitution

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IPA70R360P7S datasheet

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ipa70r360p7s.pdf pdf_icon

IPA70R360P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,... See More ⇒

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