IPA70R360P7S. Аналоги и основные параметры
Наименование производителя: IPA70R360P7S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 26.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 11 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: TO220FP
Аналог (замена) для IPA70R360P7S
- подборⓘ MOSFET транзистора по параметрам
IPA70R360P7S даташит
ipa70r360p7s 70s360p7.pdf
IPA70R360P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,
ipa70r360p7s.pdf
IPA70R360P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
ipa70r600p7s.pdf
IPA70R600P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
ipa70r900p7s.pdf
IPA70R900P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
Другие MOSFET... GP28S50XN220 , GP28S50XN220FP , GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , GP28S50GN220FP , GP28S50GN3P , GP28S50GN247 , STP80NF70 , IPSA70R360P7S , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M , SIZ728DT , SIZ730DT , SIZ790DT .
History: MTP45N05E | IRFU3704 | RU6035M3 | FDS6675B | ET2N7002K | AOD476 | 2N4360
History: MTP45N05E | IRFU3704 | RU6035M3 | FDS6675B | ET2N7002K | AOD476 | 2N4360
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Список транзисторов
Обновления
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