IPSA70R360P7S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPSA70R360P7S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 12.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 11 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de IPSA70R360P7S MOSFET
- Selecciónⓘ de transistores por parámetros
IPSA70R360P7S datasheet
ipsa70r360p7s ipsa70r360p7s 70s360p7.pdf
IPSA70R360P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge
ipsa70r1k2p7s.pdf
IPSA70R1K2P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge
ipsa70r900p7s.pdf
IPSA70R900P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge
ipsa70r2k0p7s.pdf
IPSA70R2K0P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge
Otros transistores... GP28S50XN220FP , GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , GP28S50GN220FP , GP28S50GN3P , GP28S50GN247 , IPA70R360P7S , IRFP450 , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M , SIZ728DT , SIZ730DT , SIZ790DT , SIZ900DT .
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