IPSA70R360P7S. Аналоги и основные параметры
Наименование производителя: IPSA70R360P7S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 59.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 11 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
Тип корпуса: TO251
Аналог (замена) для IPSA70R360P7S
- подборⓘ MOSFET транзистора по параметрам
IPSA70R360P7S даташит
ipsa70r360p7s ipsa70r360p7s 70s360p7.pdf
IPSA70R360P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge
ipsa70r1k2p7s.pdf
IPSA70R1K2P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge
ipsa70r900p7s.pdf
IPSA70R900P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge
ipsa70r2k0p7s.pdf
IPSA70R2K0P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge
Другие MOSFET... GP28S50XN220FP , GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , GP28S50GN220FP , GP28S50GN3P , GP28S50GN247 , IPA70R360P7S , IRFP450 , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M , SIZ728DT , SIZ730DT , SIZ790DT , SIZ900DT .
History: BSC120N03MS | FQB34P10
History: BSC120N03MS | FQB34P10
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