IPSA70R360P7S Datasheet. Specs and Replacement

Type Designator: IPSA70R360P7S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO251

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IPSA70R360P7S substitution

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IPSA70R360P7S datasheet

 ..1. Size:870K  infineon
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IPSA70R360P7S

IPSA70R360P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge... See More ⇒

 7.1. Size:882K  infineon
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IPSA70R360P7S

IPSA70R1K2P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge... See More ⇒

 7.2. Size:884K  infineon
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IPSA70R360P7S

IPSA70R900P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge... See More ⇒

 7.3. Size:868K  infineon
ipsa70r2k0p7s.pdf pdf_icon

IPSA70R360P7S

IPSA70R2K0P7S MOSFET IPAK-short lead with ISO-Standoff 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charge... See More ⇒

Detailed specifications: GP28S50XN220FP, GP28S50XN3P, GP28S50XN247, GP28S50GN220, GP28S50GN220FP, GP28S50GN3P, GP28S50GN247, IPA70R360P7S, NCEP15T14, IRF50N06, TK80E08K3, TK150E09NE, TSA9N90M, SIZ728DT, SIZ730DT, SIZ790DT, SIZ900DT

Keywords - IPSA70R360P7S MOSFET specs

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