All MOSFET. IPSA70R360P7S Datasheet

 

IPSA70R360P7S MOSFET. Datasheet pdf. Equivalent

Type Designator: IPSA70R360P7S

Marking Code: 70S360P7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 59.5 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 12.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16.4 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 11 pF

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: TO251

IPSA70R360P7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPSA70R360P7S Datasheet (PDF)

0.1. ipsa70r360p7s ipsa70r360p7s 70s360p7.pdf Size:870K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R360P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

7.1. ipsa70r900p7s.pdf Size:884K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R900P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

7.2. ipsa70r1k4ce.pdf Size:1086K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R1K4CEMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting mark

 7.3. ipsa70r600p7s.pdf Size:865K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R600P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

7.4. ipsa70r750p7s.pdf Size:884K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R750P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

 7.5. ipsa70r1k4p7s.pdf Size:871K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R1K4P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

7.6. ipsa70r600ce.pdf Size:1154K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R600CEMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting mark

7.7. ipsa70r450p7s.pdf Size:884K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R450P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

7.8. ipsa70r2k0ce.pdf Size:1086K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R2K0CEMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting mark

7.9. ipsa70r1k2p7s.pdf Size:882K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R1K2P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

7.10. ipsa70r2k0p7s.pdf Size:868K _infineon

IPSA70R360P7S
IPSA70R360P7S

IPSA70R2K0P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

Datasheet: CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , CEM3083 , IRFZ44A , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 , CEM4311 .

 

 
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