TK150E09NE Todos los transistores

 ..1. Size:922K  toshiba
 tk150e09ne.pdf

TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS -H) TK150E09NE Unit mm 10.2 0.3 3.7 0.1 1.27 0.1 E-Bike A Low drain-source ON resistance R = 3.6 m (typ.) (V = 10 V) DS (ON) GS Low leakage current I = 10 A (max) (V = 85 V) DSS DS Enhancement mode V = 2.5 4.5 V (V = 10 V, I = 1.0 mA) th DS D Absolute Maximum Ratin

 9.1. Size:212K  toshiba
 tk150f04k3.pdf

TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.7m (typ.) 10.0 0.3 High forward transfer admittance Yfs = 210 S (typ.) 0.4 0.1 9.5 0.2 Low leakage current IDSS = 10 A (max) (VDS

 9.2. Size:252K  ixys
 ixtk150n15p ixtq150n15p.pdf

IXTK 150N15P PolarHTTM VDSS = 150 V IXTQ 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V G D (TAB) VGS Continuous 20 V D S VGSM Transient 30 V ID25 TC = 25