All MOSFET. TK150E09NE Datasheet

 

TK150E09NE MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK150E09NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 81 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220AB

 TK150E09NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK150E09NE Datasheet (PDF)

 ..1. Size:922K  toshiba
 tk150e09ne.pdf

TK150E09NE TK150E09NE

TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS-H) TK150E09NE Unit: mm10.20.3 3.70.1 1.270.1 E-Bike A Low drain-source ON resistance : R = 3.6 m (typ.) (V = 10 V) DS (ON) GS Low leakage current : I = 10 A (max) (V = 85 V) DSS DS Enhancement mode : V = 2.5~4.5 V (V = 10 V, I = 1.0 mA) th DS DAbsolute Maximum Ratin

 9.1. Size:212K  toshiba
 tk150f04k3.pdf

TK150E09NE TK150E09NE

TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7m (typ.) 10.0 0.3 High forward transfer admittance: |Yfs| = 210 S (typ.) 0.4 0.19.5 0.2 Low leakage current: IDSS = 10 A (max) (VDS

 9.2. Size:252K  ixys
 ixtk150n15p ixtq150n15p.pdf

TK150E09NE TK150E09NE

IXTK 150N15PPolarHTTMVDSS = 150 VIXTQ 150N15PPower MOSFETID25 = 150 A RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VGD (TAB)VGS Continuous 20 VDSVGSM Transient 30 VID25 TC = 25

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