TK150E09NE Specs and Replacement
Type Designator: TK150E09NE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220AB
TK150E09NE substitution
- MOSFET ⓘ Cross-Reference Search
TK150E09NE datasheet
tk150e09ne.pdf
TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS -H) TK150E09NE Unit mm 10.2 0.3 3.7 0.1 1.27 0.1 E-Bike A Low drain-source ON resistance R = 3.6 m (typ.) (V = 10 V) DS (ON) GS Low leakage current I = 10 A (max) (V = 85 V) DSS DS Enhancement mode V = 2.5 4.5 V (V = 10 V, I = 1.0 mA) th DS D Absolute Maximum Ratin... See More ⇒
tk150f04k3.pdf
TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.7m (typ.) 10.0 0.3 High forward transfer admittance Yfs = 210 S (typ.) 0.4 0.1 9.5 0.2 Low leakage current IDSS = 10 A (max) (VDS... See More ⇒
ixtk150n15p ixtq150n15p.pdf
IXTK 150N15P PolarHTTM VDSS = 150 V IXTQ 150N15P Power MOSFET ID25 = 150 A RDS(on) 13 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V G D (TAB) VGS Continuous 20 V D S VGSM Transient 30 V ID25 TC = 25... See More ⇒
Detailed specifications: GP28S50GN220, GP28S50GN220FP, GP28S50GN3P, GP28S50GN247, IPA70R360P7S, IPSA70R360P7S, IRF50N06, TK80E08K3, BS170, TSA9N90M, SIZ728DT, SIZ730DT, SIZ790DT, SIZ900DT, SIZ902DT, SIZ904DT, SIZ910DT
Keywords - TK150E09NE MOSFET specs
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