TK150E09NE - параметры транзистора MOSFET, его аналоги, datasheet

TK150E09NE Datasheet (PDF)

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TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS-H) TK150E09NE Unit: mm10.20.3 3.70.1 1.270.1 E-Bike A Low drain-source ON resistance : R = 3.6 m (typ.) (V = 10 V) DS (ON) GS Low leakage current : I = 10 A (max) (V = 85 V) DSS DS Enhancement mode : V = 2.5~4.5 V (V = 10 V, I = 1.0 mA) th DS DAbsolute Maximum Ratin

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TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7m (typ.) 10.0 0.3 High forward transfer admittance: |Yfs| = 210 S (typ.) 0.4 0.19.5 0.2 Low leakage current: IDSS = 10 A (max) (VDS

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IXTK 150N15PPolarHTTMVDSS = 150 VIXTQ 150N15PPower MOSFETID25 = 150 A RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VGD (TAB)VGS Continuous 20 VDSVGSM Transient 30 VID25 TC = 25

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