SKI10297 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SKI10297 Datasheet (PDF)

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100 V, 34 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10297 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 34 A (4) D RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat

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isc N-Channel MOSFET Transistor SKI10297FEATURESDrain Current I = 34A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 66 A (4) D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate

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100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10195 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 47 A (4) D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat