Справочник MOSFET. SKI10297

 

SKI10297 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SKI10297
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 34 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4.4 ns
   Cossⓘ - Выходная емкость: 195 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0288 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SKI10297

 

 

SKI10297 Datasheet (PDF)

 ..1. Size:235K  sanken-ele
 ski10297.pdf

SKI10297 SKI10297

100 V, 34 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10297 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 34 A (4) D RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat

 ..2. Size:255K  inchange semiconductor
 ski10297.pdf

SKI10297 SKI10297

isc N-Channel MOSFET Transistor SKI10297FEATURESDrain Current I = 34A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.1. Size:235K  sanken-ele
 ski10123.pdf

SKI10297 SKI10297

100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 66 A (4) D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate

 9.2. Size:235K  sanken-ele
 ski10195.pdf

SKI10297 SKI10297

100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10195 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 47 A (4) D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat

 9.3. Size:254K  inchange semiconductor
 ski10123.pdf

SKI10297 SKI10297

isc N-Channel MOSFET Transistor SKI10123FEATURESDrain Current I = 66A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 12.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.4. Size:255K  inchange semiconductor
 ski10195.pdf

SKI10297 SKI10297

isc N-Channel MOSFET Transistor SKI10195FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 18.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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