All MOSFET. SKI10297 Datasheet

 

SKI10297 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SKI10297
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36.5 nC
   trⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0288 Ohm
   Package: TO-263

 SKI10297 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SKI10297 Datasheet (PDF)

 ..1. Size:235K  sanken-ele
 ski10297.pdf

SKI10297 SKI10297

100 V, 34 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10297 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 34 A (4) D RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gat

 ..2. Size:255K  inchange semiconductor
 ski10297.pdf

SKI10297 SKI10297

isc N-Channel MOSFET Transistor SKI10297FEATURESDrain Current I = 34A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.1. Size:235K  sanken-ele
 ski10123.pdf

SKI10297 SKI10297

100 V, 66 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 66 A (4) D RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate

 9.2. Size:235K  sanken-ele
 ski10195.pdf

SKI10297 SKI10297

100 V, 47 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET SKI10195 Features Package TO-263 V(BR)DSS -------------------------------- 100 V (ID = 100 A) ID ---------------------------------------------------------- 47 A (4) D RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gat

 9.3. Size:254K  inchange semiconductor
 ski10123.pdf

SKI10297 SKI10297

isc N-Channel MOSFET Transistor SKI10123FEATURESDrain Current I = 66A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 12.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.4. Size:255K  inchange semiconductor
 ski10195.pdf

SKI10297 SKI10297

isc N-Channel MOSFET Transistor SKI10195FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 18.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIA906EDJ | SI8100DB | SPI11N60CFD | PE551BA

 

 
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