RFG60P03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFG60P03

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 176 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 75 nS

Cossⓘ - Capacitancia de salida: 1500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TO247

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RFG60P03 datasheet

 ..1. Size:103K  harris semi
 rfg60p03 rfp60p03 rf1s60p03-sm.pdf pdf_icon

RFG60P03

 7.1. Size:105K  fairchild semi
 rfg60p06e.pdf pdf_icon

RFG60P03

RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, Features P-Channel Power MOSFET 60A, 60V The RFG60P06E P-Channel power MOSFET is rDS(ON) = 0.030 manufactured using the MegaFET process. This process, Temperature Compensating PSPICE Model which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou

 7.2. Size:133K  fairchild semi
 rfg60p05e.pdf pdf_icon

RFG60P03

RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, Features P-Channel Power MOSFET 60A, 50V This is a P-Channel power MOSFET manufactured using the rDS(ON) = 0.030 MegaFET process. This process, which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand

Otros transistores... RFG30P06, RFG40N10, RFG40N10LE, RFG45N06, RFG45N06LE, RFG50N05L, RFG50N06, RFG50N06LE, 2N7002, RFG60P05E, RFG60P06E, RFG70N06, RFG75N05E, RFL1N10L, RFP10P03L, RFP12N06RLE, RFP12N10L