RFG60P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFG60P03
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 176 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75 nS
Cossⓘ - Capacitancia de salida: 1500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET RFG60P03
RFG60P03 Datasheet (PDF)
rfg60p06e.pdf
RFG60P06EData Sheet January 200260A, 60V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 60VThe RFG60P06E P-Channel power MOSFET is rDS(ON) = 0.030manufactured using the MegaFET process. This process, Temperature Compensating PSPICE Modelwhich uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou
rfg60p05e.pdf
RFG60P05EData Sheet January 200260A, 50V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 50VThis is a P-Channel power MOSFET manufactured using the rDS(ON) = 0.030MegaFET process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand
Otros transistores... RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , 12N60 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918