RFG60P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: RFG60P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 190 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 1500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO247
RFG60P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFG60P03 Datasheet (PDF)
Datasheet: RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , AO4407 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L .
