RFG60P06E Todos los transistores

 

RFG60P06E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RFG60P06E
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 215 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 1700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

RFG60P06E Datasheet (PDF)

 ..1. Size:105K  fairchild semi
 rfg60p06e.pdf pdf_icon

RFG60P06E

RFG60P06EData Sheet January 200260A, 60V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 60VThe RFG60P06E P-Channel power MOSFET is rDS(ON) = 0.030manufactured using the MegaFET process. This process, Temperature Compensating PSPICE Modelwhich uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou

 7.1. Size:133K  fairchild semi
 rfg60p05e.pdf pdf_icon

RFG60P06E

RFG60P05EData Sheet January 200260A, 50V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 50VThis is a P-Channel power MOSFET manufactured using the rDS(ON) = 0.030MegaFET process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand

 7.2. Size:103K  harris semi
 rfg60p03 rfp60p03 rf1s60p03-sm.pdf pdf_icon

RFG60P06E

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CS4N150VF | MTN50N06E3 | CPC3730 | AM20N15-250D | SSFT4004 | SM3116NAF | IPI051N15N5

 

 
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