All MOSFET. RFG60P06E Datasheet

 

RFG60P06E MOSFET. Datasheet pdf. Equivalent

Type Designator: RFG60P06E

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 215 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: TO247

RFG60P06E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFG60P06E Datasheet (PDF)

1.1. rfg60p06e.pdf Size:105K _fairchild_semi

RFG60P06E
RFG60P06E

RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, Features P-Channel Power MOSFET • 60A, 60V The RFG60P06E P-Channel power MOSFET is • rDS(ON) = 0.030Ω manufactured using the MegaFET process. This process, • Temperature Compensating PSPICE® Model which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou

3.1. rfg60p05e.pdf Size:133K _fairchild_semi

RFG60P06E
RFG60P06E

RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, Features P-Channel Power MOSFET • 60A, 50V This is a P-Channel power MOSFET manufactured using the • rDS(ON) = 0.030Ω MegaFET process. This process, which uses feature sizes • Temperature Compensating PSPICE® Model approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand

3.2. rfg60p03 rfp60p03 rf1s60p03-sm.pdf Size:103K _harris_semi

RFG60P06E



Datasheet: RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , 2SK3569 , RFG70N06 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 .

 

 
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