RFG60P06E MOSFET Datasheet: P-Ch, 60V, 60A. Full specification with pinout and replacement list

RFG60P06E Specs and Replacement

   Type Designator: RFG60P06E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO247

RFG60P06E substitution

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RFG60P06E datasheet

..1. Size:105K fairchild semi
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RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, Features P-Channel Power MOSFET 60A, 60V The RFG60P06E P-Channel power MOSFET is rDS(ON) = 0.030 manufactured using the MegaFET process. This process, Temperature Compensating PSPICE Model which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou... See More ⇒

7.1. Size:133K fairchild semi
rfg60p05e.pdf pdf_icon

RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, Features P-Channel Power MOSFET 60A, 50V This is a P-Channel power MOSFET manufactured using the rDS(ON) = 0.030 MegaFET process. This process, which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand... See More ⇒

7.2. Size:103K harris semi
rfg60p03 rfp60p03 rf1s60p03-sm.pdf pdf_icon