All MOSFET. RFG60P06E Datasheet

 

RFG60P06E MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFG60P06E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 450(max) nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO247

 RFG60P06E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFG60P06E Datasheet (PDF)

 ..1. Size:105K  fairchild semi
 rfg60p06e.pdf

RFG60P06E RFG60P06E

RFG60P06EData Sheet January 200260A, 60V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 60VThe RFG60P06E P-Channel power MOSFET is rDS(ON) = 0.030manufactured using the MegaFET process. This process, Temperature Compensating PSPICE Modelwhich uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou

 7.1. Size:133K  fairchild semi
 rfg60p05e.pdf

RFG60P06E RFG60P06E

RFG60P05EData Sheet January 200260A, 50V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 50VThis is a P-Channel power MOSFET manufactured using the rDS(ON) = 0.030MegaFET process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand

 7.2. Size:103K  harris semi
 rfg60p03 rfp60p03 rf1s60p03-sm.pdf

RFG60P06E

Datasheet: RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , AON7410 , RFG70N06 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 .

History: 2N6969JANTX

 

 
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