RFG70N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFG70N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 137 nS

Cossⓘ - Capacitancia de salida: 792 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de RFG70N06 MOSFET

- Selecciónⓘ de transistores por parámetros

 

RFG70N06 datasheet

 ..1. Size:229K  fairchild semi
 rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf pdf_icon

RFG70N06

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic

 ..2. Size:211K  inchange semiconductor
 rfg70n06.pdf pdf_icon

RFG70N06

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor RFG70N06 FEATURES With TO-247 packaging UIS rating curve Peak current vs pulse width curve High power and current handling capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications ABSOLUTE MAXIMUM RATIN

Otros transistores... RFG45N06, RFG45N06LE, RFG50N05L, RFG50N06, RFG50N06LE, RFG60P03, RFG60P05E, RFG60P06E, IRLB4132, RFG75N05E, RFL1N10L, RFP10P03L, RFP12N06RLE, RFP12N10L, RFP12P08, RFP12P10, RFP14N05