RFG70N06 Datasheet and Replacement
Type Designator: RFG70N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 120 nC
tr ⓘ - Rise Time: 137 nS
Cossⓘ - Output Capacitance: 792 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO247
RFG70N06 substitution
RFG70N06 Datasheet (PDF)
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic
rfg70n06.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor RFG70N06FEATURESWith TO-247 packagingUIS rating curvePeak current vs pulse width curveHigh power and current handling capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsABSOLUTE MAXIMUM RATIN
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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