All MOSFET. RFG70N06 Datasheet

 

RFG70N06 Datasheet and Replacement


   Type Designator: RFG70N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 137 nS
   Cossⓘ - Output Capacitance: 792 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO247
 

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RFG70N06 Datasheet (PDF)

 ..1. Size:229K  fairchild semi
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf pdf_icon

RFG70N06

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic

 ..2. Size:211K  inchange semiconductor
rfg70n06.pdf pdf_icon

RFG70N06

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor RFG70N06FEATURESWith TO-247 packagingUIS rating curvePeak current vs pulse width curveHigh power and current handling capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsABSOLUTE MAXIMUM RATIN

Datasheet: RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , 5N60 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 , RFP14N05 .

Keywords - RFG70N06 MOSFET datasheet

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