UJN1208K Todos los transistores

 

UJN1208K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UJN1208K
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 94 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.285 Ohm
   Paquete / Cubierta: TO-247
 

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UJN1208K Datasheet (PDF)

 ..1. Size:577K  usc
ujn1208k.pdf pdf_icon

UJN1208K

xJ SiC Series... 80mW - 1200V SiC Normally-On JFET...UJN1208K...FeaturesCASE Low On-Resistance RDS(on)max of 0.080WCASE Voltage controlledMaximum operating temperature of 175CExtremely fast switching not dependent on temperatureLow gate chargeLow intrinsic capacitanceTypical Applications1 2 3 Over Current Protection CircuitsDC-AC InvertersPart Number Pack

 7.1. Size:436K  usc
ujn1208z.pdf pdf_icon

UJN1208K

xJ SiC Series... 80mW - 1200V SiC Normally-On JFET...UJN1208Z Die Form...FeaturesLow On-Resistance RDS(on)max of 0.080WVoltage controlledMaximum operating temperature of 175CSource Extremely fast switching not dependent on Pad temperatureLow gate chargeLow intrinsic capacitanceTypical Applications Gate Pad Over Current Protection CircuitsDC-AC InvertersPart N

 8.1. Size:564K  usc
ujn1205k.pdf pdf_icon

UJN1208K

xJ SiC Series... 45mW - 1200V SiC Normally-On JFET...UJN1205K...FeaturesCASE Low On-Resistance RDS(on)max of 0.045WCASE Voltage controlledMaximum operating temperature of 175CExtremely fast switching not dependent on temperatureLow gate chargeLow intrinsic capacitanceTypical Applications1 2 3 Over Current Protection CircuitsDC-AC InvertersPart Number Pack

 8.2. Size:424K  usc
ujn1205z.pdf pdf_icon

UJN1208K

xJ SiC Series... 45mW - 1200V SiC Normally-On JFET...UJN1205Z Die Form...FeaturesLow On-Resistance RDS(on)max of 0.045WVoltage controlledMaximum operating temperature of 175CSource Extremely fast switching not dependent on Pad temperatureLow gate chargeLow intrinsic capacitanceTypical ApplicationsGate Pad Over Current Protection CircuitsDC-AC InvertersPart

Otros transistores... SW4N65U , SW4N70B , SW4N70K , SW4N80B , SW601Q , U55NF06 , UC1764 , UJN1205K , CS150N03A8 , UM6J1N , UM6K33N , UM6K34N , UPA1716 , UPA1716G , UPA1717 , UPA1717G , UPA1720 .

History: MS23P21 | SPC10N80G | HMS80N10D

 

 
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