UJN1208K PDF and Equivalents Search

 

UJN1208K Specs and Replacement

Type Designator: UJN1208K

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.285 Ohm

Package: TO-247

UJN1208K substitution

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UJN1208K datasheet

 ..1. Size:577K  usc
ujn1208k.pdf pdf_icon

UJN1208K

xJ SiC Series... 80mW - 1200V SiC Normally-On JFET... UJN1208K... Features CASE Low On-Resistance RDS(on)max of 0.080W CASE Voltage controlled Maximum operating temperature of 175 C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance Typical Applications 1 2 3 Over Current Protection Circuits DC-AC Inverters Part Number Pack... See More ⇒

 7.1. Size:436K  usc
ujn1208z.pdf pdf_icon

UJN1208K

xJ SiC Series... 80mW - 1200V SiC Normally-On JFET... UJN1208Z Die Form... Features Low On-Resistance RDS(on)max of 0.080W Voltage controlled Maximum operating temperature of 175 C Source Extremely fast switching not dependent on Pad temperature Low gate charge Low intrinsic capacitance Typical Applications Gate Pad Over Current Protection Circuits DC-AC Inverters Part N... See More ⇒

 8.1. Size:564K  usc
ujn1205k.pdf pdf_icon

UJN1208K

xJ SiC Series... 45mW - 1200V SiC Normally-On JFET... UJN1205K... Features CASE Low On-Resistance RDS(on)max of 0.045W CASE Voltage controlled Maximum operating temperature of 175 C Extremely fast switching not dependent on temperature Low gate charge Low intrinsic capacitance Typical Applications 1 2 3 Over Current Protection Circuits DC-AC Inverters Part Number Pack... See More ⇒

 8.2. Size:424K  usc
ujn1205z.pdf pdf_icon

UJN1208K

xJ SiC Series... 45mW - 1200V SiC Normally-On JFET... UJN1205Z Die Form... Features Low On-Resistance RDS(on)max of 0.045W Voltage controlled Maximum operating temperature of 175 C Source Extremely fast switching not dependent on Pad temperature Low gate charge Low intrinsic capacitance Typical Applications Gate Pad Over Current Protection Circuits DC-AC Inverters Part ... See More ⇒

Detailed specifications: SW4N65U, SW4N70B, SW4N70K, SW4N80B, SW601Q, U55NF06, UC1764, UJN1205K, IRF520, UM6J1N, UM6K33N, UM6K34N, UPA1716, UPA1716G, UPA1717, UPA1717G, UPA1720

Keywords - UJN1208K MOSFET specs

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