All MOSFET. UJN1208K Datasheet

 

UJN1208K MOSFET. Datasheet pdf. Equivalent


   Type Designator: UJN1208K
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 62 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.285 Ohm
   Package: TO-247

 UJN1208K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UJN1208K Datasheet (PDF)

 ..1. Size:577K  usc
ujn1208k.pdf

UJN1208K UJN1208K

xJ SiC Series... 80mW - 1200V SiC Normally-On JFET...UJN1208K...FeaturesCASE Low On-Resistance RDS(on)max of 0.080WCASE Voltage controlledMaximum operating temperature of 175CExtremely fast switching not dependent on temperatureLow gate chargeLow intrinsic capacitanceTypical Applications1 2 3 Over Current Protection CircuitsDC-AC InvertersPart Number Pack

 7.1. Size:436K  usc
ujn1208z.pdf

UJN1208K UJN1208K

xJ SiC Series... 80mW - 1200V SiC Normally-On JFET...UJN1208Z Die Form...FeaturesLow On-Resistance RDS(on)max of 0.080WVoltage controlledMaximum operating temperature of 175CSource Extremely fast switching not dependent on Pad temperatureLow gate chargeLow intrinsic capacitanceTypical Applications Gate Pad Over Current Protection CircuitsDC-AC InvertersPart N

 8.1. Size:564K  usc
ujn1205k.pdf

UJN1208K UJN1208K

xJ SiC Series... 45mW - 1200V SiC Normally-On JFET...UJN1205K...FeaturesCASE Low On-Resistance RDS(on)max of 0.045WCASE Voltage controlledMaximum operating temperature of 175CExtremely fast switching not dependent on temperatureLow gate chargeLow intrinsic capacitanceTypical Applications1 2 3 Over Current Protection CircuitsDC-AC InvertersPart Number Pack

 8.2. Size:424K  usc
ujn1205z.pdf

UJN1208K UJN1208K

xJ SiC Series... 45mW - 1200V SiC Normally-On JFET...UJN1205Z Die Form...FeaturesLow On-Resistance RDS(on)max of 0.045WVoltage controlledMaximum operating temperature of 175CSource Extremely fast switching not dependent on Pad temperatureLow gate chargeLow intrinsic capacitanceTypical ApplicationsGate Pad Over Current Protection CircuitsDC-AC InvertersPart

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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