RFP14N05L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFP14N05L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 185 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de RFP14N05L MOSFET
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RFP14N05L datasheet
rfd14n05l rfd14n05lsm rfp14n05l.pdf
RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utili
rfd14n05-sm rfp14n05.pdf
RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon
rfp14n06.pdf
RFP14N06 Data Sheet July 1999 File Number 4002.3 14A, 60V, 0.100 Ohm, N-Channel Power Features MOSFET 14A, 60V This N-Channel power MOSFET is manufactured using the rDS(ON) = 0.100 MegaFET process. This process which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in
rfd14n06l-sm rfp14n06l.pdf
RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 File Number 4088.3 14A, 60V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives o
Otros transistores... RFG75N05E, RFL1N10L, RFP10P03L, RFP12N06RLE, RFP12N10L, RFP12P08, RFP12P10, RFP14N05, AON7410, RFP14N06, RFP14N06L, RFP15N05L, RFP15N06L, RFP15N08L, RFP15P05, RFP15P05SM, RFP15P06
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