Справочник MOSFET. RFP14N05L

 

RFP14N05L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RFP14N05L
   Маркировка: F14N05L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 40(max) nC
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 185 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для RFP14N05L

 

 

RFP14N05L Datasheet (PDF)

 ..1. Size:207K  fairchild semi
 rfd14n05l rfd14n05lsm rfp14n05l.pdf

RFP14N05L RFP14N05L

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili

 6.1. Size:381K  fairchild semi
 rfd14n05-sm rfp14n05.pdf

RFP14N05L RFP14N05L

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon

 7.1. Size:74K  intersil
 rfp14n06.pdf

RFP14N05L RFP14N05L

RFP14N06Data Sheet July 1999 File Number 4002.314A, 60V, 0.100 Ohm, N-Channel Power FeaturesMOSFET 14A, 60VThis N-Channel power MOSFET is manufactured using the rDS(ON) = 0.100MegaFET process. This process which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI integrated circuits, gives optimumutilization of silicon, resulting in

 7.2. Size:83K  intersil
 rfd14n06l-sm rfp14n06l.pdf

RFP14N05L RFP14N05L

RFD14N06L, RFD14N06LSM, RFP14N06LData Sheet July 1999 File Number 4088.314A, 60V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, giveso

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