All MOSFET. RFP14N05L Datasheet

 

RFP14N05L MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFP14N05L
   Marking Code: F14N05L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40(max) nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220AB

 RFP14N05L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFP14N05L Datasheet (PDF)

 ..1. Size:207K  fairchild semi
 rfd14n05l rfd14n05lsm rfp14n05l.pdf

RFP14N05L RFP14N05L

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili

 6.1. Size:381K  fairchild semi
 rfd14n05-sm rfp14n05.pdf

RFP14N05L RFP14N05L

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon

 7.1. Size:74K  intersil
 rfp14n06.pdf

RFP14N05L RFP14N05L

RFP14N06Data Sheet July 1999 File Number 4002.314A, 60V, 0.100 Ohm, N-Channel Power FeaturesMOSFET 14A, 60VThis N-Channel power MOSFET is manufactured using the rDS(ON) = 0.100MegaFET process. This process which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI integrated circuits, gives optimumutilization of silicon, resulting in

 7.2. Size:83K  intersil
 rfd14n06l-sm rfp14n06l.pdf

RFP14N05L RFP14N05L

RFD14N06L, RFD14N06LSM, RFP14N06LData Sheet July 1999 File Number 4088.314A, 60V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, giveso

Datasheet: RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 , RFP14N05 , 5N60 , RFP14N06 , RFP14N06L , RFP15N05L , RFP15N06L , RFP15N08L , RFP15P05 , RFP15P05SM , RFP15P06 .

History: FDB2614

 

 
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