OSG55R190DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG55R190DF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.7 nS

Cossⓘ - Capacitancia de salida: 125.9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO252

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OSG55R190DF datasheet

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 osg55r190af osg55r190df osg55r190ff osg55r190pf.pdf pdf_icon

OSG55R190DF

OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF , Enhancement Mode N-Channel Power MOSFET Genera

 ..2. Size:980K  oriental semi
 osg55r190df.pdf pdf_icon

OSG55R190DF

OSG55R190DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:939K  oriental semi
 osg55r190ff.pdf pdf_icon

OSG55R190DF

OSG55R190FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:401K  oriental semi
 osg55r190af.pdf pdf_icon

OSG55R190DF

OSG55R190AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... UPA2670T1R, UPA2672T1R, UPA2680T1E, UPA2700GR, STQ1NC45, RU7088R3, PTP04N04N, OSG55R190AF, IRF740, OSG55R190FF, OSG55R190PF, MDU2657, JCS4N60V, JCS4N60R, JCS4N60S, JCS4N60B, JCS4N60C